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Inorganic Thermoelectric Materials: Advances and Applications

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A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: 31 October 2026 | Viewed by 4612

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Dr. Chengjin An

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Department of Chemistry, Yanbian University, Yanji 133000, China
Interests: energy materials; energy device; energy storage; energy conversion; thermoelectrics; battery; electronic structure theory

Special Issue Information

Dear Colleagues,

Inorganic thermoelectric materials have emerged as a pivotal research focus, offering a sustainable pathway for direct conversion between heat and electricity. These materials—such as bismuth telluride-based compounds, lead chalcogenides, and skutterudites—hold significant potential for applications in waste heat recovery, solid-state cooling, and power generation. However, despite recent advancements, further improvements in their performance and scalability are essential to meet global energy demands and reduce greenhouse gas emissions.

The thermoelectric efficiency of these materials is governed by their dimensionless figure of merit (ZT), which depends on the interplay between the Seebeck coefficient, electrical conductivity, and thermal conductivity. Achieving high ZT values requires innovative strategies to decouple these inter-related properties, such as nanostructuring, band engineering, doping, and defect control. Furthermore, understanding the fundamental mechanisms behind electron–phonon interactions, carrier transport, and thermal management is critical for optimizing material performance.

This Special Issue, titled “Inorganic Thermoelectric Materials: Advances and Applications”, seeks to showcase cutting-edge research that pushes the boundaries of thermoelectric science and technology. We invite contributions spanning experimental and theoretical approaches, including the following:

Novel synthesis and processing techniques for inorganic thermoelectrics;
Advanced characterization of thermal and electronic transport properties;
Theoretical modeling and computational design of high-performance materials;
Strategies for enhancing ZT through nanostructuring, alloying, and composite design;
Scalable fabrication and device integration for real-world applications.

Both original research articles and comprehensive reviews are welcome. By bringing together diverse perspectives, this Special Issue aims to foster collaboration and accelerate progress in this dynamic and impactful field.

We look forward to your valuable contributions.

Dr. Chengjin An
Guest Editor

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Keywords

inorganic thermoelectrics
energy conversion
waste-heat recovery
figure of merit (ZT)
Seebeck coefficient
thermal conductivity
electrical conductivity

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Published Papers (6 papers)

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Research

12 pages, 9062 KB

Open AccessArticle

Enhanced Thermoelectric Performance of CuInTe₂ via SnTe Incorporation and Microwave Synthesis

by Lin Bo, Yongpeng Wang, Wenying Wang, Wenying Zhou, Xingshuo Liu, Laizeng Shi and Degang Zhao

Inorganics 2026, 14(7), 194; https://doi.org/10.3390/inorganics14070194 - 21 Jul 2026

Viewed by 401

Abstract

Incorporating a secondary phase represents a promising strategy for enhancing the thermoelectric performance of materials. In this study, CuInTe₂ was modified with SnTe powders at various weight fractions (0, 0.5, 1, 2, 4 wt%) and subsequently synthesized via rapid microwave melting. The phase composition and microstructure of the resulting materials were systematically characterized. Structural analyses revealed that the introduction of SnTe induced the incorporation of Sn and Te into the CuInTe₂ lattice, accompanied by a progressive contraction in lattice parameters. Owing to the spontaneous formation of intrinsic Sn vacancies in SnTe and the regulation of carrier concentration, electrical conductivity of up to 2.7 × 10⁴ Sm⁻¹ was achieved, representing a 1.7-fold increase over pristine CuInTe₂. Coupled with a notable reduction in lattice thermal conductivity (0.9 Wm⁻¹K⁻¹ at 700 K), a maximum figure of merit of 0.44 was obtained for the CuInTe₂-2 wt% SnTe sample. While the absolute zT value is moderate compared to state-of-the-art CuInTe₂-based materials, this work establishes the feasibility of microwave melting combined with second-phase incorporation as a rapid and energy-efficient synthesis pathway for CuInTe₂ modification. These results demonstrate that the introduction of SnTe is a viable strategy for enhancing the thermoelectric performance of CuInTe₂. Full article

(This article belongs to the Special Issue Inorganic Thermoelectric Materials: Advances and Applications)

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16 pages, 7629 KB

Open AccessArticle

Phase Transition and Thermoelectric Performance of Solid-State-Synthesized Wittichenite Cu₃BiS₃

by Pooloun Lee and Il-Ho Kim

Inorganics 2026, 14(6), 166; https://doi.org/10.3390/inorganics14060166 - 18 Jun 2026

Viewed by 442

Abstract

Wittichenite (Cu₃BiS₃) was synthesized by mechanical alloying (MA) followed by hot pressing (HP), and its phase evolution, thermal stability, charge transport behavior, and thermoelectric performance were systematically examined. X-ray diffraction analysis of the MA powders revealed broadened diffraction peaks, indicating reduced crystallinity and refined crystallite size. After HP consolidation, a well-defined single-phase orthorhombic wittichenite structure was obtained. These results demonstrate that the mechanically induced solid-state synthesis was effectively initiated during MA and subsequently completed through crystallization, defect relaxation, and densification during HP. The MA–HP processed specimens exhibited high relative densities of 94–98% of the theoretical value and a homogeneous microstructure without detectable compositional segregation or grain-boundary enrichment, confirming the formation of a structurally and chemically stable single-phase bulk material. Thermal analysis identified a reversible polymorphic phase transition from P2₁2₁2₁ to Pnma at low temperature, followed by structural relaxation and the onset of partial decomposition at higher temperatures, indicating that Cu₃BiS₃ retains structural integrity below 700 K, which defines the relevant operating window for thermoelectric evaluation. The samples exhibited p-type semiconducting behavior, with electrical conductivity increasing with temperature due to thermally activated hole transport and showing an additional enhancement across the structural transition region. The Seebeck coefficient remained positive over the entire temperature range and decreased gradually with increasing temperature, consistent with semiconductor transport characteristics. The thermal conductivity remained low at 0.30–0.38 W·m⁻¹·K⁻¹, with a negligible electronic contribution, confirming that heat transport is dominated by lattice phonon scattering. As a result of the combined increase in electrical conductivity and intrinsically low thermal conductivity, the dimensionless figure of merit (ZT) increased continuously with temperature and reached 0.17 at 673 K. These results demonstrate that the MA–HP route provides an effective and scalable strategy for producing phase-pure Cu₃BiS₃ with controlled microstructure and reproducible thermoelectric performance. Full article

(This article belongs to the Special Issue Inorganic Thermoelectric Materials: Advances and Applications)

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13 pages, 2422 KB

Open AccessCommunication

Vapor-Phase Infiltration of Al-Doped Zinc Oxide into Poly(Methyl Methacrylate) for Enhanced Low-Temperature Thermoelectric Performance

by Dai Cuong Tran, Indirajith Palani, Heeseo Kim, Sangmin Lee, Sangho Cho and Myung Mo Sung

Inorganics 2026, 14(6), 149; https://doi.org/10.3390/inorganics14060149 - 30 May 2026

Viewed by 777

Abstract

Semiconducting metal oxides are gaining attention in thermoelectric applications, where performance is evaluated by the figure of merit (ZT), which depends on the power factor (S²σ) and thermal conductivity (κ). However, achieving high ZT values in these materials remains challenging. This study introduces a distinct strategy to enhance thermoelectric performance by infiltrating aluminum-doped zinc oxide (AZO) into poly(methyl methacrylate) (PMMA) films using the vapor-phase infiltration (VPI) technique. The resulting AZO/PMMA hybrid films exhibit a unique composite structure with AZO nanocrystals embedded within an amorphous PMMA matrix. This structure facilitates energy-dependent carrier scattering (the energy filtering effect) at the AZO/PMMA interfaces, thereby enhancing the Seebeck coefficient, while phonon scattering at the interfaces reduces thermal conductivity. By precisely controlling VPI parameters, we achieved a uniform dispersion of AZO nanocrystals within the PMMA matrix. The optimized AZO/PMMA hybrid film demonstrated a power factor of 1306 μW m⁻¹ K⁻² and a thermal conductivity of 1.02 W m⁻¹ K⁻¹, resulting in a ZT value of approximately 0.384 at 300 K, which is one of the highest reported for metal oxide thermoelectric materials near room temperature. The successful integration of AZO into the PMMA matrix via VPI opens new pathways for developing high-performance, flexible thermoelectric materials. Full article

(This article belongs to the Special Issue Inorganic Thermoelectric Materials: Advances and Applications)

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14 pages, 2353 KB

Open AccessArticle

Synergistic Optimization of Thermoelectric Properties of Indium Oxide-Based Thermoelectric Materials by Calcium Doping Regulation

by Jie Zhang, Bo Feng, Zhiwen Yang, Yichen Li, Xuan Liu, Shilang Guo, Xiaoqi Nong, Junjie Zhang, Chenan Zhang, Xiaoqiong Zuo, Haoyu Zeng, Tongqiang Xiong, Jiang Zhu, Suoluoyan Yang and Ruolin Ruan

Inorganics 2026, 14(2), 55; https://doi.org/10.3390/inorganics14020055 - 12 Feb 2026

Cited by 1 | Viewed by 576

Abstract

The effects of Ca doping content on the crystal structure, electronic transport, thermal transport, and mechanical properties of In₂O₃ were systematically studied by means of X-ray diffraction (XRD), thermoelectric performance test, and first-principles calculation. XRD analysis shows that Ca²⁺ can be completely solid-dissolved into the In₂O₃ lattice to form a single-phase solid solution without the formation of impurity phases, and the lattice constant increases linearly with the increase in doping content, confirming that Ca²⁺ successfully replaces In³⁺ and triggers lattice expansion. The results of thermoelectric performance tests show that Ca doping can significantly improve the electrical conductivity of the material. The essence is that Ca doping introduces a large number of free electrons through the charge compensation effect, and coordinately regulates the carrier concentration and mobility to optimize the electronic transport performance. In terms of thermal transport performance, Ca doping leads to a decreasing trend of the total thermal conductivity of the material. The core mechanism is that the difference in ionic radius between Ca²⁺ and In³⁺ causes lattice distortion, enhanced mass fluctuation scattering, and defect scattering. At the same time, the decrease in Young’s modulus intensifies phonon scattering, resulting in a significant decrease in lattice thermal conductivity (dominating the change in total thermal conductivity), while the electronic thermal conductivity increases slightly but accounts for a very low proportion. Under the synergistic optimization of electrical and thermal transport, the thermoelectric figure of merit (ZT) of the material increases from ~0.05 to ~0.239, with particularly prominent effects in the medium and high-temperature range. Full article

(This article belongs to the Special Issue Inorganic Thermoelectric Materials: Advances and Applications)

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14 pages, 4033 KB

Open AccessArticle

Study on the Control of Electrical and Thermal Transport Properties of Indium Oxide Thermoelectric Materials for Aiye Processing Equipment by Cerium Doping

by Jie Zhang, Bo Feng, Zhengxiang Yang, Sichen Zhang, Junjie Zhang, Jiao Lei, Yaoyang Zhang, Xiaoqiong Zuo, Zhiwen Yang, Tongqiang Xiong, Wenzheng Li, Tong Tang, Suoluoyan Yang and Ruolin Ruan

Inorganics 2025, 13(12), 412; https://doi.org/10.3390/inorganics13120412 - 16 Dec 2025

Cited by 1 | Viewed by 622

Abstract

To address the low energy conversion efficiency and weak mechanical strength of In₂O₃ thermoelectric materials for Aiye Processing Equipment, this study systematically investigated the regulatory effects and mechanisms of Ce doping on In₂O₃’s thermoelectric and mechanical properties via experiments. In₂O₃ samples with varying Ce contents were prepared, and property-microstructure correlations were analyzed through electrical/thermal transport tests, Vickers hardness measurements, and crystal structure characterization. Results show Ce doping synergistically optimizes In₂O₃ properties through multiple mechanisms. For thermoelectric performance, Ce⁴⁺ regulates carrier concentration and mobility, enhancing electrical conductivity and power factor. Meanwhile, lattice distortion from Ce-In atomic size differences strengthens phonon scattering, reducing lattice and total thermal conductivity. These effects boost the maximum ZT from 0.055 (pure In₂O₃) to 0.328 at 973 K obtained by x = 0.0065, improving energy conversion efficiency significantly. For mechanical properties, Ce doping enhances Vickers hardness and plastic deformation resistance via solid solution strengthening (lattice distortion hinders dislocations), microstructure densification (reducing vacancies/pores), Ce-O bond strengthening, and defect pinning. This study confirms Ce doping as an effective strategy for simultaneous optimization of In₂O₃’s thermoelectric and mechanical properties, providing experimental/theoretical support for oxide thermoelectric material development and valuable references for their medium-low temperature energy recovery applications. Full article

(This article belongs to the Special Issue Inorganic Thermoelectric Materials: Advances and Applications)

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15 pages, 4603 KB

Open AccessArticle

The Impact Mechanism of Y Doping on the Thermoelectric Properties and Financial Costs of Oxide for Application of Thermal Power Generation

by Tongqiang Xiong, Jie Zhang, Bo Feng, Bowei Yang, Min Gao, Shilong Pan, Wenji Lv, Zhiwen Yang, Zikang Hu, Tong Tang, Wenzheng Li, Suoluoyan Yang, Haitao Zhang and Yonghong Chen

Inorganics 2025, 13(12), 386; https://doi.org/10.3390/inorganics13120386 - 25 Nov 2025

Cited by 2 | Viewed by 780

Abstract

This paper delves into the impact of Y doping on In₂O₃ thermoelectric materials. Yttrium doping significantly modifies the properties of In₂O₃, with far-reaching implications for its thermoelectric performance and mechanical characteristics. In the electrical domain, Y³⁺ substitution for In³⁺ optimizes carrier concentration and mobility. The alteration of the electronic band structure leads to a balanced improvement in the Seebeck coefficient and electrical conductivity, boosting the power factor. Despite initial lattice distortion-induced mobility changes, carrier screening at suitable doping levels counteracts this, enhancing overall electrical conductivity. Regarding thermal conductivity, multiple factors act synergistically. Lattice distortion, along with the generation of point defects, dislocations, nanostructuring, and modulated electron–phonon interactions, jointly reduce heat transfer. This reduction is vital for maintaining a substantial temperature gradient, a prerequisite for efficient thermoelectric conversion. The observed increase in ZT (the thermoelectric device figure of merit) with the highest value from ~0.055 to ~0.275. Full article

(This article belongs to the Special Issue Inorganic Thermoelectric Materials: Advances and Applications)

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