Maximum Entropy Principle and Semiconductors

Dear Colleagues,

Enhanced functional integration in modern electron devices requires an increasingly accurate modeling of charge and energy transport in semiconductors in order to describe high-field phenomena, such as hot electron propagation and heat generation. Both semi-classical and quantum hydrodynamic-like models, more general than the drift-diffusion one, have been searched for in order to cope with these requirements. One of the main problem is that of the closure of the systems of equations constituting the models. Inspired from Jaynes’ studies on Information Theory and Statistical Mechanics, an important strategy for closure is based on the Maximum Entropy Principle. This principle consists of statistically inferring the least biased distribution function on the basis of the given information. The procedure can be used for standard devices, confined structure, nanowires, quantum resonant tunneling effects, hetero-structures, and novel materials such as graphene and carbon nanotubes.

The field of semiconductor modeling is going through rapid development involving many fields of science, such as mathematics, physics, engineering, and more. We, therefore, solicit contribution to this Special Issue on “Maximum Entropy Principle and Semiconductors”.

Dr. Vittorio Romano
Dr. Giovanni Mascali
Guest Editors

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