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Entropy 2016, 18(10), 368;

A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle

Dipartimento di Matematica e Informatica, Università di Catania, Catania 95125, Italy
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editors: Vittorio Romano, Giovanni Mascali and Kevin H. Knuth
Received: 14 July 2016 / Revised: 6 September 2016 / Accepted: 30 September 2016 / Published: 19 October 2016
(This article belongs to the Special Issue Maximum Entropy Principle and Semiconductors)
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Silicon nanowires (SiNW) are quasi-one-dimensional structures in which the electrons are spatially confined in two directions, and they are free to move along the axis of the wire. The spatial confinement is governed by the Schrödinger–Poisson system, which must be coupled to the transport in the free motion direction. For devices with the characteristic length of a few tens of nanometers, the transport of the electrons along the axis of the wire can be considered semiclassical, and it can be dealt with by the multi-sub-band Boltzmann transport equations (MBTE). By taking the moments of the MBTE, a hydrodynamic model has been formulated, where explicit closure relations for the fluxes and production terms (i.e., the moments on the collisional operator) are obtained by means of the maximum entropy principle of extended thermodynamics, including the scattering of electrons with phonons, impurities and surface roughness scattering. Numerical results are shown for a SiNW transistor. View Full-Text
Keywords: silicon; nanowire; hydrodynamic; maximum entropy principle silicon; nanowire; hydrodynamic; maximum entropy principle

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Muscato, O.; Castiglione, T. A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle. Entropy 2016, 18, 368.

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