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Energies
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GaN-Based Optoelectronic Devices
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GaN-Based Optoelectronic Devices

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D1: Advanced Energy Materials".

Deadline for manuscript submissions: closed (30 April 2022) | Viewed by 2692

Special Issue Editor

Prof. Dr. Paul R. Berger

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
Interests: quantum tunneling; printable semiconductor; Si; organic semiconductors; gallium nitride

Special Issue Information

Dear Colleagues,

Tremendous performance gains have been accomplished with blue- and white-light-emitting diodes (LED) and associated lasers, building upon the tremendous work of Akasaki, Amano, and Nakamura recognized in their 2014 Nobel Prize in Physics. However, usage for high-power lighting applications has revealed efficiency droop, poor Ohmic contacts, and self-heating. Designs that incorporate quantum tunneling provide some pathways to overcome these bottlenecks and facilitate deep ultraviolet light emitters for new applications, such as virus sterilization.

Prof. Dr. Paul R. Berger
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Gallium nitride
  • Light emitters
  • Quantum tunneling
  • Efficiency droop
  • High-power
  • Deep ultraviolet

Published Papers (1 paper)

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Research

8 pages, 2809 KiB  
Article
Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures
by Weidong Zhang, Tyler A. Growden, Paul R. Berger, David F. Storm, David J. Meyer and Elliott R. Brown
Energies 2021, 14(20), 6654; https://doi.org/10.3390/en14206654 - 14 Oct 2021
Viewed by 1126
Abstract
An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, [...] Read more.
An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generated through interband tunneling and the electrons injected into the GaN emitter region of the GaN/AlN heterostructure devices. Full article
(This article belongs to the Special Issue GaN-Based Optoelectronic Devices)
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