Recent Advances in Emerging Semiconductor Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 May 2026 | Viewed by 42

Special Issue Editor


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Guest Editor
Advanced Electromagnetic Information Materials and Devices Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Interests: semiconductor materials; extreme conditions; organic materials; low-dimensional magnetic materials

Special Issue Information

Dear Colleagues,

Semiconductor materials exhibit significant transformations in their structural and functional properties when subjected to extreme conditions, such as high pressure, extreme temperatures, strong magnetic fields, or intense radiation. These environmental factors can induce profound alterations in the crystal lattice, including phase transitions, dislocations, and distortions. Such structural changes directly impact the electronic characteristics of the material, leading to modifications in bandgap size, electron redistribution, and charge carrier mobility.

Topics of interests include, but are not limited to, the following:

  1. Evolution of Electronic Properties: The analysis of how structural changes modify electronic characteristics, including bandgap engineering, electron redistribution, and charge carrier mobility;
  2. Interdependent Property Modifications: The examination of the consequent alterations in optical (e.g., absorption/ spectra), mechanical (e.g., hardness, elasticity), and thermodynamic properties (e.g., thermal conductivity, heat capacity);
  3. Novel Applications and Device Engineering: The exploration of new applications stemming from tunable material properties, such as advanced sensors, and energy conversion systems for extreme environments;
  4. Advanced Experimental and Computational Methods: Computational modeling to probe and predict material behavior under extreme conditions.

Dr. Limin Chen
Guest Editor

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Keywords

  • extreme conditions
  • semiconductors
  • structure–property relationship
  • property modulation

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Published Papers (1 paper)

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Research

18 pages, 8227 KB  
Article
Surge Current Analysis of High-Power Press Pack Diodes: Junction Temperature and Forward-Voltage Modeling
by Fawad Ahmad, Luis Vaccaro, Armel Asongu Nkembi, Mario Marchesoni and Federico Portesine
Electronics 2025, 14(24), 4899; https://doi.org/10.3390/electronics14244899 - 12 Dec 2025
Abstract
In recent years, the use of high-power semiconductor devices has seen growing demand across various applications, including data centers, electric vehicles, and traction systems. However, increasing power densities may increase challenges in ensuring the reliability of devices, particularly under high surge currents. These [...] Read more.
In recent years, the use of high-power semiconductor devices has seen growing demand across various applications, including data centers, electric vehicles, and traction systems. However, increasing power densities may increase challenges in ensuring the reliability of devices, particularly under high surge currents. These surge events may result in excessive power dissipation and rapid temperature increases, leading to device performance degradation and potential failure. Therefore, accurate temperature estimation is critical. However, existing approaches in the literature are mostly oversimplified and constrained by static I–V characteristics, limiting their accuracy. To encounter these limitations, this article proposes a forward-voltage-based temperature evaluation methodology for high-power diodes subjected to 10 ms surge events. The proposed model integrates rated electrical parameters with thermal simulation data to enable the accurate estimation of dynamic slope resistance and forward voltage during transient surge operation. The proposed framework shows strong agreement with the experimental results and provides a reliable tool for surge capability assessment. This approach enhances device modeling accuracy under very-high-current stress and offers valuable insights for electro-thermal design and thermal management in next-generation power semiconductor devices. Full article
(This article belongs to the Special Issue Recent Advances in Emerging Semiconductor Devices)
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