Research and Application of Wide Band Gap Semiconductors

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 November 2024 | Viewed by 133

Special Issue Editors

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Guest Editor
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK
Interests: semiconductor devices; power electronics; WBG and UWBG semiconductors; power devices and circuits; 4H-SiC; diamond; GaN; TCAD mixed-mode modelling and design

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Guest Editor
Department of Electrical Engineering and Information Technology (DIETI), University of Naples Federico II, Via Claudio 21, 80125 Naples, Italy
Interests: power electronics; power semiconductor devices; GaN; 4H-SiC; electro-thermal modelling; SPICE modelling

Special Issue Information

Dear Colleagues,

The emerging generation of power semiconductor devices based on wide bandgap (WBG) semiconductors is revolutionizing the power device market. Improved material quality and painstaking R&D efforts have enabled superior device performances for 4H-SiC MOSFETs and GaN HEMTs when compared to equivalent Si-based solutions.

However, the success of future generation devices relies upon addressing several scientific challenges as follows:

  1. Optimization of material growth towards low defect density substrates and thick epi layers.
  2. Comprehensive understanding of the role of defects in the electrical and thermal performance of final devices.
  • Device design optimization and co-optimization of passivation, insulation, and packaging solutions to increase power densities without compromising the reliability and long-term lifetime.
  1. Comprehensive understanding of the devices’ reliability and degradation phenomena (such as time dependent dielectric breakdown (TDDB), hot carrier injection (HCJ), dynamic Ron, bipolar degradation, threshold voltage instability, interface traps, and bulk traps, etc.), as well as subsequent design solutions to mitigate them.
  2. Optimization of converter and gate driver architectures to fully exploit the potential of the latest generation of WBG semiconductors.
  3. vi) Understanding the potential and limitations of a new class of materials, namely UWBG devices (Diamond, AlN, Ga2O3), and evaluating whether novel device designs and solutions can outperform current commercial devices.

This Special Issue aims to highlight and collect the latest advancements in device fabrication, material growth, device electro-thermal modeling and simulations, lateral and vertical novel device configurations, reliability tests and measurements, as well as converter- and system-related solutions for both WBG and UWBG devices. Topics of interest include (but are not limited to) the following:

  • WBG and UWBG power semiconductor devices (GaN, 4H-SiC, Diamond, Gallium Oxide, AlN, etc.)
  • Advanced WBG material epitaxy and substrate growth
  • Thermal optimization of WBG devices
  • System-level aspects of WBG and UWBG devices
  • Monolithic and heterogeneous integration
  • System- and device-level reliability

Dr. Nazareno Donato
Dr. Alessandro Borghese
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • WBG semiconductors
  • UWBG semiconductors
  • 4H-SiC FETs
  • GaN HEMT
  • vertical GaN
  • AlN
  • diamond electronics
  • power devices
  • finite element modelling
  • reliability

Published Papers

This special issue is now open for submission.
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