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Emerging Memory/Storage Technologies and Applications: Trends, and Challenges
This special issue belongs to the section “Computer Science & Engineering“.
Special Issue Information
Dear Colleagues,
Recently, the explosive increase in data-intensive applications, including machine learning, has accelerated the development of memory and storage technologies, and its importance has been emphasized more and more. With the advent of new memory and storage devices, the traditional memory hierarchy of computer systems is undergoing a change with new layers. The appearance of new devices requires the evaluation and redesign of the I/O software layers, including the device itself as well as its applications.
The introduction of NAND flash storages and the recently released Intel 3D-Xpoint Permanent Memory are expected to greatly improve the performance and reliability of data-intensive applications, but this cannot be achieved without the support of the software stack. SSDs have already been used in many applications within a short period of time and are evolving along with various technologies, such as all flash array and in-storage processing. With the emerging new memory and storages, there will be opportunities and challenges for improving the performance and reliability of various applications.
In this context, this Special Issue aims to highlight emerging memory/storage technologies and applications. Potential topics include but are not limited to the following:
- Memory and storage design for data-intensive applications;
- AI/ML for memory/storage optimization;
- Memory/storage for AI/ML;
- Emerging memory/storage hierarchy design;
- Processing in memory (PIM)/in-storage processing technologies;
- Reliability, availability, and fault tolerance;
- RAID/all flash array/erasure coding;
- System software for emerging memory/storage technologies;
- Energy-efficient memory/storage management;
- Performance modeling, prediction, and simulation;
- Key-value and NoSQL store;
- File systems and workload benchmarking.
Dr. Jaeho Kim
Dr. Donghyun Kang
Dr. Sungyong Ahn
Guest Editors
Manuscript Submission Information
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