Superconductivity at High Pressure

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 July 2023) | Viewed by 5290

Special Issue Editor


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Guest Editor
Department of Solid State Chemistry, Max-Planck- Institute for Chemical Physics of Solids, 01187 Dresden, Germany
Interests: high-pressure science and technology; superconductivity; structural phase transitions; Raman spectroscopy

Special Issue Information

Dear Colleagues,

The exploration of the chemical, structural, and electronic parameters of a solid, which lead to the appearance or enhancement of superconductivity, is an ongoing topic of intensive research. The study of pressure effects on the properties of superconducting materials can serve as a quantitative test of theoretical models and, at the same time, as a guide in the synthesis of novel materials with superconducting properties. Therefore, many materials that do not superconduct at ambient conditions become superconducting at high (very high) pressures, while some superconducting materials can be synthesized only at the conditions of high pressure and high temperature. The study of the dependence of the critical temperature (Tc) of superconductivity on pressure can provide ideas for increasing Tc for a given superconductor at ambient pressure through chemical substitution (doping).

Very often, superconductivity appears in compounds, which are close to a structural, magnetic, or electronic instability. High pressure is a powerful tool used to tune the system towards such instabilities and, therefore, in a superconducting state. Therefore, iron-based superconductors with superconductivity emerging on the borderline of ordered magnetic states have been intensively studied under pressure. The pressure tuning of the special electronic structure of topological materials led to the observation of superconductivity in a number of topological materials, an accomplishment which might be regarded as an important step toward topological superconductors with intriguing physics. The recent discovery of high-temperature superconductivity (close to room temperature) in pressurized “superhydrides” on the edge of structural instability is a prominent milestone in the history of superconductivity. All these achievements are associated with the development of and strong synergy between high-pressure experimental techniques and theoretical and calculational methods.

The goal of this Special Issue concerning “Superconductivity at High Pressure” is to provide a view of contemporary achievements in the high-pressure synthesis and study of novel superconducting materials with special emphasis on the interplay between superconductivity and the structural, electronic, magnetic, etc., properties of matter. Authors are invited to contribute to the Special Issue with articles presenting novel experimental and theoretical advances.

Dr. Sergey A. Medvedev
Guest Editor

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Keywords

  • high-pressure research
  • superconductivity
  • pressure-induced phase transitions
  • hydrides
  • topological materials
  • first-principle calculations
  • high-pressure synthesis
  • characterization methods

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Published Papers (2 papers)

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Research

9 pages, 1704 KiB  
Article
Pressure-Induced Superconductivity in PdTeI with Quasi-One-Dimensional PdTe Chains
by Yi Zhao, Jun Hou, Yang Fu, Cuiying Pei, Jianping Sun, Qi Wang, Lingling Gao, Weizheng Cao, Changhua Li, Shihao Zhu, Mingxin Zhang, Yulin Chen, Hechang Lei, Jinguang Cheng and Yanpeng Qi
Crystals 2022, 12(12), 1833; https://doi.org/10.3390/cryst12121833 - 15 Dec 2022
Cited by 4 | Viewed by 2324
Abstract
The quasi-one-dimensional material PdTeI exhibits unusual electronic transport properties at ambient pressure. Here, we systematically investigate both the structural and electronic responses of PdTeI to external pressure, through a combination of electrical transport, synchrotron X-ray diffraction (XRD), and Raman spectroscopy measurements. The charge [...] Read more.
The quasi-one-dimensional material PdTeI exhibits unusual electronic transport properties at ambient pressure. Here, we systematically investigate both the structural and electronic responses of PdTeI to external pressure, through a combination of electrical transport, synchrotron X-ray diffraction (XRD), and Raman spectroscopy measurements. The charge density wave (CDW) order in PdTeI is fragile and the transition temperature TCDW decreases rapidly with the application of external pressure. The resistivity hump is indiscernible when the pressure is increased to ~1 GPa. Upon further compression, the resistivity dropping is observed approximately ~15 GPa and zero resistance is established above ~20 GPa, suggesting the occurrence of superconductivity. Combined XRD and Raman data evidence that the emergence of superconductivity is accompanied by a pressure-induced amorphization of PdTeI. Full article
(This article belongs to the Special Issue Superconductivity at High Pressure)
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14 pages, 3759 KiB  
Article
Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments
by Meiling Hong, Lidong Dai, Haiying Hu and Xinyu Zhang
Crystals 2021, 11(7), 746; https://doi.org/10.3390/cryst11070746 - 26 Jun 2021
Cited by 4 | Viewed by 2166
Abstract
A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon [...] Read more.
A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds. Full article
(This article belongs to the Special Issue Superconductivity at High Pressure)
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