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Crystals
Special Issues
Nanowires for Novel Electronics and Photonics
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Nanowires for Novel Electronics and Photonics

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 August 2022) | Viewed by 4879

Special Issue Editors

Dr. Yunyan Zhang

E-Mail Website
Guest Editor
Department of Physics, University of Paderborn, Paderborn, Germany
Interests: nanoscience; material growth; device fabrication; photonics; electronics
Special Issues, Collections and Topics in MDPI journals
Dr. Wei Li

E-Mail Website
Guest Editor
College of Materials Science and Engineering, Beijing University of Technology, Beijing, China
Interests: characterization; transmission electron microscopy; microstructure; semiconductor materials; optical properties; quantum dots
Prof. Dr. Feng Liu

E-Mail Website
Guest Editor
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China
Interests: quantum dot; quantum optics; cavity QED; integrated quantum optical circuits; single photon source

Special Issue Information

Dear Colleagues,

Nanowires (NWs) have been envisioned as nanoscale materials for next-generation technology with good functionality, superior performance, high integration ability and low cost, because of their special growth modes and unique 1D structure. Their novel properties can solve many bottlenecks in the fields of electronics and photonics, which has gained them great attention in recent years. We are welcoming submissions on solving the main challenges and presenting important progress in the fabrication and applications of NWs. Topics may include novel III–V NW growth techniques that significantly improve the NW morphology, crystal quality, and structures, such as axial and radial junctions. The scope also includes the construction of novel electronics and photonics with NWs. Moreover, reviews are also welcomed on the advantages, challenges, major breakthroughs, and perspective outlook of using NWs in the research field of electronics and photonics.

Kind regards,

Dr. Yunyan Zhang
Dr. Wei Li
Prof. Dr. Feng Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nanowires
  • Electronics
  • Photonics
  • Crystallography
  • Crystal Growth
  • Material Characterization

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Published Papers (2 papers)

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Research

18 pages, 4037 KiB  
Article
Atomic Simulations of Si@Ge and Ge@Si Nanowires for Mechanical and Thermal Properties
by Dandan Zhao, Yang Cui, Jing Li and Lin Zhang
Crystals 2022, 12(10), 1447; https://doi.org/10.3390/cryst12101447 - 13 Oct 2022
Cited by 1 | Viewed by 1814
Abstract
Molecular dynamics simulations using Tersoff potential were performed in order to study the evolution of the atomic packing structures, loading states on the atoms, and tensile tests, as well as the thermal properties of Si/Ge core–shell nanowires with different core–shell structures and ratios [...] Read more.
Molecular dynamics simulations using Tersoff potential were performed in order to study the evolution of the atomic packing structures, loading states on the atoms, and tensile tests, as well as the thermal properties of Si/Ge core–shell nanowires with different core–shell structures and ratios at different temperatures. Potential energy and pair distribution functions indicate the structural features of these nanowires at different temperatures. During uniaxial tensile testing along the wire axis at different temperatures, different stages including elasticity, plasticity, necking, and fractures are characterized through stress–strain curves, and Young’s modulus, as well as tensile strength, are obtained. The packing patterns and Lode–Nadai parameters reveal the deformation evolution and different distributions of loading states at different strains and temperatures. The simulation results indicate that as the temperature increases, elasticity during the stretching process becomes less apparent. Young’s modulus of the Si/Ge core–shell nanowires at room temperature show differences with changing core–shell ratios. In addition, the Lode–Nadai parameters and atomic level pressures show the differences of these atoms under compression or tension. Temperature and strain significantly affects the pressure distribution in these nanowires. The phonon density of states, when varying the composition and strain, suggest different vibration modes at room temperature. The heat capacities of these nanowires were also determined. Full article
(This article belongs to the Special Issue Nanowires for Novel Electronics and Photonics)
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8 pages, 2408 KiB  
Article
Selective Growth of Energy-Band-Controllable In1−xGaxAsyP1−y Submicron Wires in V-Shaped Trench on Si
by Wenyu Yang, Zhengxia Yang, Mengqi Wang, Hongyan Yu, Yejin Zhang, Wei Wang, Xuliang Zhou and Jiaoqing Pan
Crystals 2022, 12(4), 476; https://doi.org/10.3390/cryst12040476 - 30 Mar 2022
Viewed by 2307
Abstract
The In1−xGaxAsyP1−y submicron wires with adjustable wavelengths directly grown by metalorganic chemical vapor deposition on a V-groove-patterned Si (001) substrate are reported in this paper. To ensure the material quality, aspect ratio trapping and selective area [...] Read more.
The In1−xGaxAsyP1−y submicron wires with adjustable wavelengths directly grown by metalorganic chemical vapor deposition on a V-groove-patterned Si (001) substrate are reported in this paper. To ensure the material quality, aspect ratio trapping and selective area growth methods are used. By changing the parameters in the epitaxy process, we realize the adjustment of the material energy band of In1−xGaxAsyP1−y submicron wires. By further optimizing the growth conditions, we realize high-quality submicron wires. The morphology of the submicron wires is characterized by scanning electron microscopy and transmission electron microscopy. Through high-resolution X-ray diffraction measurement, it is disclosed that the lattice of the optimized In1−xGaxAsyP1−y part matches that of InP. A PL spectrum test shows that the PL spectrum peak is from 1260 nm to 1340 nm. The In1−xGaxAsyP1−y can be used as a well material or barrier material in a quantum well, which would promote the development of silicon-based lasers. Full article
(This article belongs to the Special Issue Nanowires for Novel Electronics and Photonics)
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