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Crystals
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Advanced Semiconductor Materials and Devices
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Advanced Semiconductor Materials and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 January 2022) | Viewed by 15407

Special Issue Editors

Dr. Mihaela Kusko

E-Mail Website
Guest Editor
Nanobiotechnology Laboratory, National Institute for R&D in Microtechnologies (IMT-Bucharest), Bucharest, Romania
Interests: nanomaterials; nanocomposites; heterostructure engineering; energy harvesting and storage; optoelectronic devices; sensors
Special Issues, Collections and Topics in MDPI journals
Dr. Florin Nastase

E-Mail Website
Guest Editor
Research Centre for Integrated Systems Nanotechnologies and Carbon Based Nanomaterials (CENASIC), National Institute for Research and Development in Microtechnologies (IMT Bucharest), 077190 Bucharest, Romania
Interests: thin films technology; atomic layer deposition (ALD); plasma processing of materials (plasma polymerization, plasma functionalization); organic semiconductors (semiconducting polymers); nanocomposites (polymer nanocomposites); polymer physics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We are pleased to announce that the selected articles presented at the 44th International Semiconductor Conference – CAS 2021, an IEEE event, 6–8 October 2021 (https://www.imt.ro/cas/), will be published in a Special Issue of Crystals.

CAS has strengthened its position over the years as an international platform for sharing novel research results, extending its profile from semiconductor devices physics and technology, including semiconductor materials and microelectronics, to micro- and nanotechnologies.

CAS 2021 cordially invites authors to submit extended versions of their original papers and contributions to the Special Issue of Crystals (at least 50% extension for the submissions), provided that they fall within the following topics:

  • Nanoscience and nanoengineering
  • Micro- and nanophotonics and optoelectronics
  • Microwave and millimeter wave circuits and systems
  • Microsensors and microsystems 
  • Modelling
  • Semiconductor devices
  • Integrated circuits

The main goal of this Special Issue is to present the latest research results, technological advances and applications in the areas of micro- and nanotechnologies and semiconductor electronics.

This Special Issue of Crystals is open to submissions from participants at the 44th International Semiconductor Conference—CAS 2021, as well as from other researchers working in the field.

Dr. Mihaela Kusko
Dr. Florin Nastase
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterials
  • 2D materials
  • thin films
  • devices
  • circuits
  • sensors
  • microsystems
  • oxide materials
  • microstructural and optoelectronic characterization

Published Papers (3 papers)

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Research

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11 pages, 5382 KiB  
Article
Study of MoS2 Deposited by ALD on c-Si, Towards the Development of MoS2/c-Si Heterojunction Photovoltaics
by Bienlo Flora Zerbo, Mircea Modreanu, Ian Povey, Jun Lin, Antoine Létoublon, Alain Rolland, Laurent Pédesseau, Jacky Even, Bruno Lépine, Pascal Turban, Philippe Schieffer, Alain Moréac and Olivier Durand
Crystals 2022, 12(10), 1363; https://doi.org/10.3390/cryst12101363 - 26 Sep 2022
Cited by 2 | Viewed by 1737
Abstract
Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-silicon heterojunction solar cells, consisting of a preliminary study of the [...] Read more.
Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-silicon heterojunction solar cells, consisting of a preliminary study of the MoS2 material and numerical device simulations of MoS2/Si heterojunction solar cells, using SILVACO ATLAS. Through the optical and structural characterization of MoS2/SiO2/Si samples, we found a significant sensitivity of the MoS2 to ambient oxidation. Optical ellipsometry showed a bandgap of 1.87 eV for a 7 monolayer thick MoS2 sample, suitable for the targeted application. Finally, we briefly introduce a device simulation and show that the MoS2/Si heterojunction could lead to a gain in quantum efficiency, especially in the region with short wavelengths, compared with a standard a-Si/c-Si solar cell. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Devices)
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15 pages, 3686 KiB  
Article
Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study
by Emiliano Laudadio, Pierluigi Stipa, Luca Pierantoni and Davide Mencarelli
Crystals 2022, 12(1), 90; https://doi.org/10.3390/cryst12010090 - 10 Jan 2022
Cited by 20 | Viewed by 5533
Abstract
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in the field of semiconductor integrated circuits. For HfO2, several crystal structures are possible, with different properties which can be difficult to describe in detail from an [...] Read more.
Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in the field of semiconductor integrated circuits. For HfO2, several crystal structures are possible, with different properties which can be difficult to describe in detail from an experimental point of view. In this study, a detailed computational approach has been shown to present a complete analysis of four HfO2 polymorphs, outlining the intrinsic properties of each phase on the basis of atomistic displacements. Methods: Density functional theory (DFT) based methods have been used to accurately describe the chemical physical properties of the polymorphs. Corrective Hubbard (U) semi-empirical terms have been added to exchange correlation energy in order to better reproduce the excited-state properties of HfO2 polymorphs. Results: the monoclinic phase resulted in the lowest cohesive energy, while the orthorhombic showed peculiar properties due to its intrinsic ferroelectric behavior. DFT + U methods showed the different responses of the four polymorphs to an applied field, and the orthorhombic phase was the least likely to undergo point defects as oxygen vacancies. Conclusions: The obtained results give a deeper insight into the differences in excited states phenomena in relation to each specific HfO2 polymorph. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Devices)
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Review

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31 pages, 13217 KiB  
Review
A Review on Precision Polishing Technology of Single-Crystal SiC
by Gaoling Ma, Shujuan Li, Feilong Liu, Chen Zhang, Zhen Jia and Xincheng Yin
Crystals 2022, 12(1), 101; https://doi.org/10.3390/cryst12010101 - 13 Jan 2022
Cited by 25 | Viewed by 6752
Abstract
Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to [...] Read more.
Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials and Devices)
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