Advances in the Growth and Application of Nitride Crystals

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: 20 May 2026 | Viewed by 22

Special Issue Editor


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Guest Editor
School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
Interests: semiconductors; vapor phase epitaxy; electron microscopy and diffraction; crystalline surfaces

Special Issue Information

Dear Colleagues,

Wide-bandgap nitride semiconductors (such as gallium nitride, aluminum nitride, and boron nitride) are ideal materials for manufacturing high-performance optoelectronic and power devices due to their exceptional physical and chemical properties. However, the lack of high-quality homogeneous substrates, coupled with the limitations of low-quality homogeneous and heterogeneous substrates, results in poor regrown crystal quality and high dislocation densities, severely restricting device performance. To fundamentally address this bottleneck, this Special Issue focuses on the growth and precision processing technologies of nitride bulk single crystals. It highlights breakthroughs in advanced growth methods—such as hydride vapor phase epitaxy, the flux method, the high-pressure ammonothermal method, and physical vapor transport—in areas including crystal defect control, stress regulation, and large-scale preparation. Additionally, it provides an in-depth analysis of key processes in substrate processing, such as cutting, grinding, chemical mechanical polishing, and surface treatment, aiming to achieve the preparation of low-damage, atomically flat nitride single crystal substrates. This Special Issue aims to promote synergistic innovation in crystal growth and processing technologies, providing high-quality substrate materials for homoepitaxy and laying the foundation for the development of next-generation semiconductor technology.

Dr. Yongzhong Wu
Guest Editor

Manuscript Submission Information

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Keywords

  • gallium nitride
  • aluminum nitride
  • boron nitride
  • crystal growth
  • substrate processing
  • hydride vapor phase epitaxy
  • flux method
  • high-pressure ammonothermal method
  • physical vapor transport
  • chemical mechanical polishing

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Published Papers

This special issue is now open for submission.
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