Novel Wide-Bandgap Semiconductor Materials and Devices
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".
Deadline for manuscript submissions: closed (30 April 2023)
Special Issue Editors
2. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, China
Interests: III–V nanowires; self-powered wide-band devices; flexible optoelectronic devices; GaN-based nanomaterials; novel semiconductor devices; molecular beam epitaxy
Special Issues, Collections and Topics in MDPI journals
Interests: plasmonic-enhanced LEDs; hyperbolic metamaterials; nanoantenna; micro-LEDs; flexible optical devices; visible-light communication devices
Special Issues, Collections and Topics in MDPI journals
Interests: self-powered photodetectors; semiconductor nanowires; GaN-based quantum dots; flexible optoelectronic sensors; nanowire physics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Wide-bandgap semiconductor materials have unique electrical and optical properties, which can be used in preparing novel devices, including flexible, self-powered and low-dimensional devices, etc. For example, flexible wide-bandgap semiconductor devices can be indispensable parts in next-generation functional devices in various fields, such as wearable intelligent electronics, flexible screens and automobile windshield navigation. Furthermore, self-powered optoelectronic devices can be indispensable and energy-saving devices, making systems economical and simple due to their ability to work independently for a long time. Therefore, novel wide-bandgap semiconductor materials and devices could provide many novel functionalities, and have the potential to introduce a novel branch of industry. The development of wide-bandgap semiconductors, however, does not only offer opportunities, but also faces great challenges. With the increasing requirements of novel optoelectronic devices and power devices for high flexibility, high transparency, high speed and low power consumption, it is urgent to develop and improve existing materials and seek novel ones, with promising potential in the development of non-natural/artificially structured materials, including semiconductor nanowires, quantum dots, metamaterials, etc. As a result, the growth, fabrication and characterization of novel wide-bandgap semiconductor materials and devices need to be strengthened and improved, due to their substantial promise in industrial applications.
In this Special Issue, we are interested in articles and reviews showing the latest developments and achievements in the field of novel wide-bandgap semiconductor materials and devices.
Dr. Yukun Zhao
Dr. Zhenhuan Tian
Dr. Jianya Zhang
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- III–V semiconductors
- nanowire materials and devices
- self-powered semiconductor devices
- flexible wide-bandgap semiconductor devices
- transparent semiconductor devices
- wide-bandgap power devices
- wide-bandgap semiconductor crystal growth
- novel wide-bandgap optoelectronic devices
- wide-bandgap nanomaterials and nanodevices
- semiconductor quantum dots
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