New Advances in Self-Catalysis Technology

A special issue of Catalysts (ISSN 2073-4344). This special issue belongs to the section "Catalytic Materials".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 3619

Special Issue Editors


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Guest Editor
Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, USA
Interests: molecular beam epitaxy; III–V compound semiconductors; photonics; photodetectors; nanoscale materials and devices

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Guest Editor
Department of Materials Science and Engineering, North Carolina State University, 27695 Raleigh, NC, USA
Interests: compound semiconductor materials and devices; epitaxial thin film growth; nanoscale materials; strain relaxation in misfit systems

Special Issue Information

Dear Colleagues,

Great strides have been made in nanowire (NW) synthesis and the manipulation of material and device properties at the nanoscale by exploiting quantum confinement, strain relaxation, high optical absorption, and design flexibility of nanoheterostructures that are exclusive to various NW configurations. Recent years have seen a systematic shift from the catalyzed growth of NWs to a self-catalyzed growth approach to alleviate the detrimental effects of the catalyst, impacting subsequent device performance. Integration of these NWs on a variety of substrates during either synthesis or post-growth transfer of nanowires with an ability to recycle substrates and less material consumption has made this an attractive, cost-effective approach. As a result, the application of semiconductor NWs has broadened to a large field of interest ranging from simple optoelectronic devices to photonic integrated circuits, and single photon detection in quantum information science to automotive LIDAR. In addition, their incorporation on flexible substrates serves as a characteristic which is potentially relevant to wearable textile and healthcare technologies. For these reasons, there has been an exponential increase in research publications.  

This Special Issue therefore aims to capture one small segment of this exciting field and is focused on the most recent progress and advances in the field of semiconductor nanowires grown by self-catalyzed epitaxy with emphasis on growth, modeling, fabrication of nanoscale optoelectronic devices, and applications thereof.

Prof. Dr. Shanthi Iyer
Prof. Dr. Lew Reynolds
Guest Editors

Manuscript Submission Information

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Keywords

  • self-catalyzed semiconductor nanowires
  • growth and modeling
  • optoelectronic devices and applications
  • nanostructures
  • nanoscale devices

Published Papers (2 papers)

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Research

9 pages, 1748 KiB  
Article
A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy
by Shisir Devkota, Mehul Parakh, Priyanka Ramaswamy, Hirandeep Kuchoor, Aubrey Penn, Lewis Reynolds and Shanthi Iyer
Catalysts 2022, 12(5), 451; https://doi.org/10.3390/catal12050451 - 19 Apr 2022
Cited by 1 | Viewed by 1869
Abstract
In this work, the effects of arsenic (As) flux used during gallium (Ga) seed droplet consumption and the post-growth annealing on the optical, electrical, and microstructural properties of self-catalyzed molecular beam epitaxially grown tellurium (Te)-doped GaAs nanowires (NWs) have been investigated using a [...] Read more.
In this work, the effects of arsenic (As) flux used during gallium (Ga) seed droplet consumption and the post-growth annealing on the optical, electrical, and microstructural properties of self-catalyzed molecular beam epitaxially grown tellurium (Te)-doped GaAs nanowires (NWs) have been investigated using a variety of characterization techniques. NWs using the same amount of As flux for growth of the seed droplet consumption demonstrated reduced density of stacking faults at the NW tip, with four-fold enhancement in the 4K photoluminescence (PL) intensity and increased single nanowire photocurrent over their higher As flux droplet consumption counterparts. Post-growth annealed NWs exhibited an additional low-energy PL peak at 1.31 eV that significantly reduced the overall PL intensity. The origin of this lower energy peak is assigned to a photocarrier transition from the conduction band to the annealing assisted Te-induced complex acceptor state (TeAsVGa). In addition, post-growth annealing demonstrated a detrimental impact on the electrical properties of the Te-doped GaAs NWs, as revealed by suppressed single nanowire (SNW) and ensemble NW photocurrent, with a consequent enhanced low-frequency noise level compared to as-grown doped NWs. This work demonstrates that each parameter in the growth space must be carefully examined to successfully grow self-catalyzed Te-doped NWs of high quality and is not a simple extension of the growth of corresponding intrinsic NWs. Full article
(This article belongs to the Special Issue New Advances in Self-Catalysis Technology)
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13 pages, 2500 KiB  
Article
Property Prediction of Ag-Filled Isotropic Conductive Adhesive through the Analysis of Its Curing and Decomposition Kinetics
by Han Jiang, Minbo Zhou and Xinping Zhang
Catalysts 2022, 12(2), 185; https://doi.org/10.3390/catal12020185 - 01 Feb 2022
Cited by 1 | Viewed by 1288
Abstract
In this study, various thermal analyses were carried out on a self-developed and commerce-oriented Ag-filled isotropic conductive adhesive (ICA) and its unfilled matrix resin through which glass transition temperature (Tg) and thermal endurance could be quantitatively predicted. An autocatalyzed kinetic [...] Read more.
In this study, various thermal analyses were carried out on a self-developed and commerce-oriented Ag-filled isotropic conductive adhesive (ICA) and its unfilled matrix resin through which glass transition temperature (Tg) and thermal endurance could be quantitatively predicted. An autocatalyzed kinetic model was used to describe the curing reaction, which was proven to be in good consistency with the experimental data. The activation energies for the curing reaction of the ICA and the matrix resin were determined to be 68.1 kJ/mol and 72.9 kJ/mol, respectively, which means that the reaction of the ICA was easier to occur than its unfilled matrix resin. As a result, the time–temperature profile could be calculated for any Tg requested based on the kinetic model of curing and the DiBenedetto equation. Further, the thermal decomposition stability of the ICA and its unfilled matrix resin were also studied. The activation energies for the thermal decomposition of the ICA and the matrix resin were calculated to be 134.1 kJ/mol and 152.7 kJ/mol, respectively, using the Ozawa–Flynn–Wall method, which means that the decomposition of ICA was easier to occur. The service life of the resin system at a specific temperature could therefore be calculated with their activation energy. The addition of micro-scale Ag flakes did not change the curing and decomposition mechanisms by much. Full article
(This article belongs to the Special Issue New Advances in Self-Catalysis Technology)
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