Atomic Layer Deposition for the Synthesis of Thin Films

Dear Colleagues,

Atomic layer deposition (ALD) is a very important nanotechnology for next generation thin film deposition for various areas such as semiconductors, displays, solar cells, fuel cells, etc., which requires conformal deposition of high-quality materials on various substrates. The advantages of ALD include its conformal deposition on complicated materials’ surfaces, its precise control of materials thickness, and its high-quality materials synthesis at low temperatures. Plasma is also applied during ALD to promote reactant gas dissociation during the atomic layer deposition processes (plasma-enhanced atomic layer deposition (PEALD)) to deposit at much lower temperatures and higher deposition rates and to increase the possibility of ALD for various other materials. In this Special Issue, the research on various ALD techniques and the characteristics of materials deposited by ALD including PEALD, which are related to various areas such as electronic devices, energy devices, bio-devices, etc., are invited for the understanding of the role, impact, and advantages of ALD for next generation device fabrication.

Prof. Geun Young Yeom
Guest Editor

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