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Journal: Electronic MaterialsVolume: 3Number: 29
Article: Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector
  • Authors:
  • Pargam Vashishtha1,2,3,
  • Pukhraj Prajapat1,2 and
  • Lalit Goswami1,2
  • et al.
Link: https://www.mdpi.com/2673-3978/3/4/29

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