- Article
Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector
- Pargam Vashishtha,
- Pukhraj Prajapat,
- Lalit Goswami,
- Aditya Yadav,
- Akhilesh Pandey and
- Govind Gupta
Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at va...

