Takeyama, A.; Makino, T.; Tanaka, Y.; Kuroki, S.-I.; Ohshima, T.
Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors. Quantum Beam Sci. 2023, 7, 31.
https://doi.org/10.3390/qubs7040031
AMA Style
Takeyama A, Makino T, Tanaka Y, Kuroki S-I, Ohshima T.
Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors. Quantum Beam Science. 2023; 7(4):31.
https://doi.org/10.3390/qubs7040031
Chicago/Turabian Style
Takeyama, Akinori, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima.
2023. "Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors" Quantum Beam Science 7, no. 4: 31.
https://doi.org/10.3390/qubs7040031
APA Style
Takeyama, A., Makino, T., Tanaka, Y., Kuroki, S.-I., & Ohshima, T.
(2023). Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors. Quantum Beam Science, 7(4), 31.
https://doi.org/10.3390/qubs7040031