Deeb, H.; Khomyakova, K.; Kokhanenko, A.; Douhan, R.; Lozovoy, K.
Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers. Inorganics 2023, 11, 303.
https://doi.org/10.3390/inorganics11070303
AMA Style
Deeb H, Khomyakova K, Kokhanenko A, Douhan R, Lozovoy K.
Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers. Inorganics. 2023; 11(7):303.
https://doi.org/10.3390/inorganics11070303
Chicago/Turabian Style
Deeb, Hazem, Kristina Khomyakova, Andrey Kokhanenko, Rahaf Douhan, and Kirill Lozovoy.
2023. "Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers" Inorganics 11, no. 7: 303.
https://doi.org/10.3390/inorganics11070303
APA Style
Deeb, H., Khomyakova, K., Kokhanenko, A., Douhan, R., & Lozovoy, K.
(2023). Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers. Inorganics, 11(7), 303.
https://doi.org/10.3390/inorganics11070303