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Journal: Electronics, 2020
Volume: 9
Number: 1402

Article: Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
Authors: by Young Jun Yoon, Jae Sang Lee, Dong-Seok Kim, Jung-Hee Lee and In Man Kang
Link: https://www.mdpi.com/2079-9292/9/9/1402

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