Cardarilli, G.C.; Khanal, G.M.; Di Nunzio, L.; Re, M.; Fazzolari, R.; Kumar, R.
Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device. Electronics 2020, 9, 287.
https://doi.org/10.3390/electronics9020287
AMA Style
Cardarilli GC, Khanal GM, Di Nunzio L, Re M, Fazzolari R, Kumar R.
Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device. Electronics. 2020; 9(2):287.
https://doi.org/10.3390/electronics9020287
Chicago/Turabian Style
Cardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, and Raj Kumar.
2020. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device" Electronics 9, no. 2: 287.
https://doi.org/10.3390/electronics9020287
APA Style
Cardarilli, G. C., Khanal, G. M., Di Nunzio, L., Re, M., Fazzolari, R., & Kumar, R.
(2020). Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device. Electronics, 9(2), 287.
https://doi.org/10.3390/electronics9020287