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Journal: ElectronicsVolume: 9Number: 2039
Article: Instability in In0.7Ga0.3As Quantum-Well MOSFETs with Single-Layer Al2O3 and Bi-Layer Al2O3/HfO2 Gate Stacks Caused by Charge Trapping under Positive Bias Temperature (PBT) Stress
  • Authors:
  • Hyuk-Min Kwon1,
  • Dae-Hyun Kim2,* and
  • Tae-Woo Kim3,*
Link: https://www.mdpi.com/2079-9292/9/12/2039

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