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Journal: Electronics, 2020
Volume: 9
Number: 1858

Article: Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate
Authors: by Matthew Whiteside, Subramaniam Arulkumaran, Yilmaz Dikme, Abhinay Sandupatla and Geok Ing Ng
Link: https://www.mdpi.com/2079-9292/9/11/1858

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