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Open AccessFeature PaperArticle

Comparison of Microstrip W-band Detectors Based on Zero Bias Schottky-Diodes

1
Erzia Technologies. C/Josefina de la Maza 4 - 2°, 39012 Santander, Spain
2
Information and Telecommunication Systems Laboratory, Université Abdelmalek Essaâdi, Tetouan 93020, Morocco
3
Department of Communications Engineering, University of Cantabria, Edificio I+D+I de Ingenieria de Telecomunicaciones, Plaza de la Ciencia, S/N 39005 Santander, Spain
*
Author to whom correspondence should be addressed.
Electronics 2019, 8(12), 1450; https://doi.org/10.3390/electronics8121450
Received: 17 October 2019 / Revised: 20 November 2019 / Accepted: 21 November 2019 / Published: 1 December 2019
(This article belongs to the Section Microwave and Wireless Communications)
This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.
Keywords: W band; Zero Bias Schottky Diode; detectors W band; Zero Bias Schottky Diode; detectors
MDPI and ACS Style

Gutiérrez, J.; Zeljami, K.; Pascual, J.P.; Fernández, T.; Tazón, A. Comparison of Microstrip W-band Detectors Based on Zero Bias Schottky-Diodes. Electronics 2019, 8, 1450.

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