Zeng, F.; An, J.X.; Zhou, G.; Li, W.; Wang, H.; Duan, T.; Jiang, L.; Yu, H.
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. Electronics 2018, 7, 377.
https://doi.org/10.3390/electronics7120377
AMA Style
Zeng F, An JX, Zhou G, Li W, Wang H, Duan T, Jiang L, Yu H.
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. Electronics. 2018; 7(12):377.
https://doi.org/10.3390/electronics7120377
Chicago/Turabian Style
Zeng, Fanming, Judy Xilin An, Guangnan Zhou, Wenmao Li, Hui Wang, Tianli Duan, Lingli Jiang, and Hongyu Yu.
2018. "A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability" Electronics 7, no. 12: 377.
https://doi.org/10.3390/electronics7120377
APA Style
Zeng, F., An, J. X., Zhou, G., Li, W., Wang, H., Duan, T., Jiang, L., & Yu, H.
(2018). A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. Electronics, 7(12), 377.
https://doi.org/10.3390/electronics7120377