Ghasemi, F.; Frisenda, R.; Dumcenco, D.; Kis, A.; Perez de Lara, D.; Castellanos-Gomez, A.
High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics 2017, 6, 28.
https://doi.org/10.3390/electronics6020028
AMA Style
Ghasemi F, Frisenda R, Dumcenco D, Kis A, Perez de Lara D, Castellanos-Gomez A.
High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics. 2017; 6(2):28.
https://doi.org/10.3390/electronics6020028
Chicago/Turabian Style
Ghasemi, Foad, Riccardo Frisenda, Dumitru Dumcenco, Andras Kis, David Perez de Lara, and Andres Castellanos-Gomez.
2017. "High Throughput Characterization of Epitaxially Grown Single-Layer MoS2" Electronics 6, no. 2: 28.
https://doi.org/10.3390/electronics6020028
APA Style
Ghasemi, F., Frisenda, R., Dumcenco, D., Kis, A., Perez de Lara, D., & Castellanos-Gomez, A.
(2017). High Throughput Characterization of Epitaxially Grown Single-Layer MoS2. Electronics, 6(2), 28.
https://doi.org/10.3390/electronics6020028