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Journal: Electronics, 2016
Volume: 5
Number: 12

Article: High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
Authors: by Farid Medjdoub, Riad Kabouche, Ezgi Dogmus, Astrid Linge and Malek Zegaoui
Link: https://www.mdpi.com/2079-9292/5/1/12

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