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Chen K, Peng R, Huang S, Wang L, Zhu J, Duan E, Zhang B, Zhou Q. Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects. Electronics. 2025; 14(7):1321. https://doi.org/10.3390/electronics14071321

Chen, Kuangli, Rong Peng, Shuting Huang, Long Wang, Jianggen Zhu, Enchuan Duan, Bo Zhang, and Qi Zhou. 2025. "Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects" Electronics 14, no. 7: 1321. https://doi.org/10.3390/electronics14071321

Chen, K., Peng, R., Huang, S., Wang, L., Zhu, J., Duan, E., Zhang, B., & Zhou, Q. (2025). Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects. Electronics, 14(7), 1321. https://doi.org/10.3390/electronics14071321