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Electronics2025, 14(4), 818;https://doi.org/10.3390/electronics14040818

Journal: ElectronicsVolume: 14Number: 818

Article: A Framework for Embedded Non-Volatile Memory Development: Examples from Pb(Zr_xTi_1−x)O₃ Ferroelectric Memory Development at Texas Instruments

Authors:
Ted Moise^1,*,†,
Scott Summerfelt² and
John Rodriguez³

Link: https://www.mdpi.com/2079-9292/14/4/818

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