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Journal: Electronics, 2025
Volume: 14
Number: 818
Article:
A Framework for Embedded Non-Volatile Memory Development: Examples from Pb(ZrxTi1−x)O3 Ferroelectric Memory Development at Texas Instruments
Authors:
by
Ted Moise, Scott Summerfelt and John Rodriguez
Link:
https://www.mdpi.com/2079-9292/14/4/818
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