Huang, H.; Wu, Z.; Peng, C.; Shen, H.; Wu, X.; Yang, J.; Lei, Z.; Cui, X.; Ma, T.; Zhang, Z.;
et al. Comprehensive Study of Proton and Heavy Ion-Induced Damages for Cascode GaN-Based HEMTs. Electronics 2025, 14, 2653.
https://doi.org/10.3390/electronics14132653
AMA Style
Huang H, Wu Z, Peng C, Shen H, Wu X, Yang J, Lei Z, Cui X, Ma T, Zhang Z,
et al. Comprehensive Study of Proton and Heavy Ion-Induced Damages for Cascode GaN-Based HEMTs. Electronics. 2025; 14(13):2653.
https://doi.org/10.3390/electronics14132653
Chicago/Turabian Style
Huang, Huixiang, Zhipeng Wu, Chao Peng, Hanxin Shen, Xiaoqiang Wu, Jianqun Yang, Zhifeng Lei, Xiuhai Cui, Teng Ma, Zhangang Zhang,
and et al. 2025. "Comprehensive Study of Proton and Heavy Ion-Induced Damages for Cascode GaN-Based HEMTs" Electronics 14, no. 13: 2653.
https://doi.org/10.3390/electronics14132653
APA Style
Huang, H., Wu, Z., Peng, C., Shen, H., Wu, X., Yang, J., Lei, Z., Cui, X., Ma, T., Zhang, Z., He, Y., Chen, Y., & Lu, G.
(2025). Comprehensive Study of Proton and Heavy Ion-Induced Damages for Cascode GaN-Based HEMTs. Electronics, 14(13), 2653.
https://doi.org/10.3390/electronics14132653