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Journal: ElectronicsVolume: 13Number: 1642
Article: Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication
  • Authors:
  • Kexiang Wang,
  • Jie Lu and
  • Zeyang Xiang
  • et al.
Link: https://www.mdpi.com/2079-9292/13/9/1642

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