Order Article Reprints

Wang K, Lu J, Xiang Z, Wang Z, Jin H, Li R, Jiang R. Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO₂ and Segmented Fabrication. Electronics. 2024; 13(9):1642. https://doi.org/10.3390/electronics13091642

Wang, Kexiang, Jie Lu, Zeyang Xiang, Zixuan Wang, Huilin Jin, Ranping Li, and Ran Jiang. 2024. "Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO₂ and Segmented Fabrication" Electronics 13, no. 9: 1642. https://doi.org/10.3390/electronics13091642

Wang, K., Lu, J., Xiang, Z., Wang, Z., Jin, H., Li, R., & Jiang, R. (2024). Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO₂ and Segmented Fabrication. Electronics, 13(9), 1642. https://doi.org/10.3390/electronics13091642