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Journal: ElectronicsVolume: 13Number: 1352
Article: Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation
- Authors:
- Chaeyun Kim1,
- Hyowon Yoon2 and
- Dong-Seok Kim3
- et al.
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