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Journal: Electronics, 2024
Volume: 13
Number: 1352
Article:
Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation
Authors:
by
Chaeyun Kim, Hyowon Yoon, Dong-Seok Kim and Ogyun Seok
Link:
https://www.mdpi.com/2079-9292/13/7/1352
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