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Journal: Electronics, 2024
Volume: 13
Number: 1267

Article: 4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests
Authors: by Dahui Yoo, MiJin Kim, Inho Kang and Ho-Jun Lee
Link: https://www.mdpi.com/2079-9292/13/7/1267

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