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Journal: ElectronicsVolume: 13Number: 1267
Article: 4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests
- Authors:
- Dahui Yoo1,
- MiJin Kim2 and
- Inho Kang3
- et al.
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