Next Article in Journal
Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side
Previous Article in Journal
Research on an Enhanced Multimodal Network for Specific Emitter Identification
 
 
Article

Article Versions Notes

Electronics 2024, 13(3), 652; https://doi.org/10.3390/electronics13030652
Action Date Notes Link
article xml file uploaded 4 February 2024 10:22 CET Original file -
article xml uploaded. 4 February 2024 10:22 CET Update https://www.mdpi.com/2079-9292/13/3/652/xml
article pdf uploaded. 4 February 2024 10:22 CET Version of Record https://www.mdpi.com/2079-9292/13/3/652/pdf
article html file updated 4 February 2024 10:24 CET Original file https://www.mdpi.com/2079-9292/13/3/652/html
Back to TopTop