Zhang, W.; Ge, M.; Li, Y.; Tan, S.; Yu, C.; Chen, D.
TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with Imax > 240 mA/mm. Electronics 2024, 13, 4752.
https://doi.org/10.3390/electronics13234752
AMA Style
Zhang W, Ge M, Li Y, Tan S, Yu C, Chen D.
TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with Imax > 240 mA/mm. Electronics. 2024; 13(23):4752.
https://doi.org/10.3390/electronics13234752
Chicago/Turabian Style
Zhang, Wenqian, Mei Ge, Yi Li, Shuxin Tan, Chenhui Yu, and Dunjun Chen.
2024. "TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with Imax > 240 mA/mm" Electronics 13, no. 23: 4752.
https://doi.org/10.3390/electronics13234752
APA Style
Zhang, W., Ge, M., Li, Y., Tan, S., Yu, C., & Chen, D.
(2024). TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with Imax > 240 mA/mm. Electronics, 13(23), 4752.
https://doi.org/10.3390/electronics13234752