Joo, H.J.; Yoon, S.S.; Oh, S.Y.; Lim, Y.; Lee, G.H.; Yoo, G.
Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current. Electronics 2024, 13, 4515.
https://doi.org/10.3390/electronics13224515
AMA Style
Joo HJ, Yoon SS, Oh SY, Lim Y, Lee GH, Yoo G.
Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current. Electronics. 2024; 13(22):4515.
https://doi.org/10.3390/electronics13224515
Chicago/Turabian Style
Joo, Hyeong Jun, Si Sung Yoon, Seung Yoon Oh, Yoojin Lim, Gyu Hyung Lee, and Geonwook Yoo.
2024. "Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current" Electronics 13, no. 22: 4515.
https://doi.org/10.3390/electronics13224515
APA Style
Joo, H. J., Yoon, S. S., Oh, S. Y., Lim, Y., Lee, G. H., & Yoo, G.
(2024). Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current. Electronics, 13(22), 4515.
https://doi.org/10.3390/electronics13224515
