Order Article Reprints

Chen Y, Song Y, Wu B, Liu F, Deng Y, Kang P, Huang X, Wu Y, Gao D, Xu K. Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance. Electronics. 2024; 13(20):4101. https://doi.org/10.3390/electronics13204101

Chen, Yanning, Yixian Song, Bo Wu, Fang Liu, Yongfeng Deng, Pingrui Kang, Xiaoyun Huang, Yongyu Wu, Dawei Gao, and Kai Xu. 2024. "Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance" Electronics 13, no. 20: 4101. https://doi.org/10.3390/electronics13204101

Chen, Y., Song, Y., Wu, B., Liu, F., Deng, Y., Kang, P., Huang, X., Wu, Y., Gao, D., & Xu, K. (2024). Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance. Electronics, 13(20), 4101. https://doi.org/10.3390/electronics13204101