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Electronics2024, 13(20), 4101;https://doi.org/10.3390/electronics13204101

Journal: ElectronicsVolume: 13Number: 4101

Article: Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance

Authors:
Yanning Chen^1,2,†,
Yixian Song^2,† and
Bo Wu¹
et al.

Link: https://www.mdpi.com/2079-9292/13/20/4101

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