Chen, Y.; Song, Y.; Wu, B.; Liu, F.; Deng, Y.; Kang, P.; Huang, X.; Wu, Y.; Gao, D.; Xu, K.
Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance. Electronics 2024, 13, 4101.
https://doi.org/10.3390/electronics13204101
AMA Style
Chen Y, Song Y, Wu B, Liu F, Deng Y, Kang P, Huang X, Wu Y, Gao D, Xu K.
Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance. Electronics. 2024; 13(20):4101.
https://doi.org/10.3390/electronics13204101
Chicago/Turabian Style
Chen, Yanning, Yixian Song, Bo Wu, Fang Liu, Yongfeng Deng, Pingrui Kang, Xiaoyun Huang, Yongyu Wu, Dawei Gao, and Kai Xu.
2024. "Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance" Electronics 13, no. 20: 4101.
https://doi.org/10.3390/electronics13204101
APA Style
Chen, Y., Song, Y., Wu, B., Liu, F., Deng, Y., Kang, P., Huang, X., Wu, Y., Gao, D., & Xu, K.
(2024). Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance. Electronics, 13(20), 4101.
https://doi.org/10.3390/electronics13204101
