Choi, S.; Park, J.-S.; Kang, M.; Jung, H.-s.; Song, Y.-h.
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications. Electronics 2024, 13, 451.
https://doi.org/10.3390/electronics13020451
AMA Style
Choi S, Park J-S, Kang M, Jung H-s, Song Y-h.
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications. Electronics. 2024; 13(2):451.
https://doi.org/10.3390/electronics13020451
Chicago/Turabian Style
Choi, Seonjun, Jin-Seong Park, Myounggon Kang, Hong-sik Jung, and Yun-heub Song.
2024. "An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications" Electronics 13, no. 2: 451.
https://doi.org/10.3390/electronics13020451
APA Style
Choi, S., Park, J.-S., Kang, M., Jung, H.-s., & Song, Y.-h.
(2024). An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications. Electronics, 13(2), 451.
https://doi.org/10.3390/electronics13020451