Lee, G.; Yang, J.; Yeom, M.J.; Yoon, S.; Yoo, G.
Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors. Electronics 2024, 13, 2783.
https://doi.org/10.3390/electronics13142783
AMA Style
Lee G, Yang J, Yeom MJ, Yoon S, Yoo G.
Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors. Electronics. 2024; 13(14):2783.
https://doi.org/10.3390/electronics13142783
Chicago/Turabian Style
Lee, Gyuhyung, Jeongyong Yang, Min Jae Yeom, Sisung Yoon, and Geonwook Yoo.
2024. "Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors" Electronics 13, no. 14: 2783.
https://doi.org/10.3390/electronics13142783
APA Style
Lee, G., Yang, J., Yeom, M. J., Yoon, S., & Yoo, G.
(2024). Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors. Electronics, 13(14), 2783.
https://doi.org/10.3390/electronics13142783