An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied
Abstract
:1. Introduction
2. Details of the Proposed Structures
3. Simulation Results and Discussion
3.1. Simulated Structures, Models, and Parameters
3.2. Simulation Results and Analysis When Applying IF Structure in COP Structure
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Parameters | Value | ||
---|---|---|---|
Polysilicon [16] | Si3N4 [15] | IGZO [13] | |
Trap concentration (cm−3) (electro, hole trap) | 1 × 1021 | 5 × 1019 | 1 × 1020 |
Energy level(eV) | 0.1 (electron) −0.1 (hole) | 2.5 (electron) −1.0 (hole) | 0.1 (electron) −0.1 (hole) |
Operation | Value | ||||
---|---|---|---|---|---|
Target (WL8) | Non-Targets (Other WLS) | SUB | CSL | BL | |
Program | 20 V | 9 V | 0 V | 0 V | 0 V |
Erase [16] | 0 V | 0 V | 20 V | 10 V, 20 V (First), (Second) | 10 V, 20 V (First), (Second) |
Read | −5~8 V | 5 V | 0 V | 0 V | 1 V |
Comparison Items | Proposed Structures | ||
---|---|---|---|
3D NAND | SP [15] | IF [This Work] | |
Program performance | Normal (~8 μs) | Normal (~8 μs) | Normal (~8 μs) |
Erase performance | Slow (~10 ms) | Fast (10~100 μs) | Fast (10~100 μs) |
Leakage current | Normal (~10−13 A) | Normal (~10−13 A) | Very small (lower 10−15 A) |
Self-boosting performance | Normal (~16 V) | Very little bad (15~14 V) | Little bad (14 V) |
Peri circuit area reduction | None | reduced | None |
Manufacturing cost | Normal | Very Expensive (2 filler formation) | Expensive (1 filler formation) |
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Choi, S.; Kang, M.; Song, Y.-H. An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied. Electronics 2023, 12, 2945. https://doi.org/10.3390/electronics12132945
Choi S, Kang M, Song Y-H. An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied. Electronics. 2023; 12(13):2945. https://doi.org/10.3390/electronics12132945
Chicago/Turabian StyleChoi, Seonjun, Myounggon Kang, and Yun-Heub Song. 2023. "An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied" Electronics 12, no. 13: 2945. https://doi.org/10.3390/electronics12132945
APA StyleChoi, S., Kang, M., & Song, Y.-H. (2023). An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied. Electronics, 12(13), 2945. https://doi.org/10.3390/electronics12132945