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Journal: Electronics, 2021
Volume: 10
Number: 659

Article: 3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications
Authors: by Kyuhyun Cha, Jongwoon Yoon and Kwangsoo Kim
Link: https://www.mdpi.com/2079-9292/10/6/659

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