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Journal: ElectronicsVolume: 10Number: 3096
Article: Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties
- Authors:
- P. Vigneshwara Raja1,
- Nandha Kumar Subramani1 and
- Florent Gaillard1
- et al.
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