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Raja PV, Subramani NK, Gaillard F, Bouslama M, Sommet R, Nallatamby J-C. Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y₂₁ Frequency Dispersion Properties. Electronics. 2021; 10(24):3096. https://doi.org/10.3390/electronics10243096

Raja, P. Vigneshwara, Nandha Kumar Subramani, Florent Gaillard, Mohamed Bouslama, Raphaël Sommet, and Jean-Christophe Nallatamby. 2021. "Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y₂₁ Frequency Dispersion Properties" Electronics 10, no. 24: 3096. https://doi.org/10.3390/electronics10243096

Raja, P. V., Subramani, N. K., Gaillard, F., Bouslama, M., Sommet, R., & Nallatamby, J.-C. (2021). Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y₂₁ Frequency Dispersion Properties. Electronics, 10(24), 3096. https://doi.org/10.3390/electronics10243096