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Aziza H, Hamdioui S, Fieback M, Taouil M, Moreau M, Girard P, Virazel A, Coulié K. Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State. Electronics. 2021; 10(18):2222. https://doi.org/10.3390/electronics10182222

Aziza, Hassan, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, Arnaud Virazel, and Karine Coulié. 2021. "Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State" Electronics 10, no. 18: 2222. https://doi.org/10.3390/electronics10182222

Aziza, H., Hamdioui, S., Fieback, M., Taouil, M., Moreau, M., Girard, P., Virazel, A., & Coulié, K. (2021). Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State. Electronics, 10(18), 2222. https://doi.org/10.3390/electronics10182222