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Journal: ElectronicsVolume: 10Number: 2222
Article: Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State
  • Authors:
  • Hassan Aziza1,*,
  • Said Hamdioui2 and
  • Moritz Fieback2
  • et al.
Link: https://www.mdpi.com/2079-9292/10/18/2222

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