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Review

High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

1
Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova, Italy
2
Institute of Condensed Matter Chemistry and Technologies for Energy, National Research Council, CNR-ICMATE, Via De Marini 6, 16149 Genova, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Alberto Palmero
Coatings 2021, 11(6), 724; https://doi.org/10.3390/coatings11060724
Received: 6 May 2021 / Revised: 8 June 2021 / Accepted: 12 June 2021 / Published: 16 June 2021
Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films. View Full-Text
Keywords: ionic conductivity; defects association; high pressure X-ray diffraction; doped ceria; thin films; microdevices; solid oxide cells ionic conductivity; defects association; high pressure X-ray diffraction; doped ceria; thin films; microdevices; solid oxide cells
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MDPI and ACS Style

Massardo, S.; Cingolani, A.; Artini, C. High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes. Coatings 2021, 11, 724. https://doi.org/10.3390/coatings11060724

AMA Style

Massardo S, Cingolani A, Artini C. High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes. Coatings. 2021; 11(6):724. https://doi.org/10.3390/coatings11060724

Chicago/Turabian Style

Massardo, Sara, Alessandro Cingolani, and Cristina Artini. 2021. "High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes" Coatings 11, no. 6: 724. https://doi.org/10.3390/coatings11060724

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