Byeon, D.-S.; Cho, C.; Yoon, D.; Choi, Y.; Lee, K.; Baik, S.; Ko, D.-H.
Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD. Coatings 2021, 11, 568.
https://doi.org/10.3390/coatings11050568
AMA Style
Byeon D-S, Cho C, Yoon D, Choi Y, Lee K, Baik S, Ko D-H.
Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD. Coatings. 2021; 11(5):568.
https://doi.org/10.3390/coatings11050568
Chicago/Turabian Style
Byeon, Dae-Seop, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik, and Dae-Hong Ko.
2021. "Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD" Coatings 11, no. 5: 568.
https://doi.org/10.3390/coatings11050568
APA Style
Byeon, D.-S., Cho, C., Yoon, D., Choi, Y., Lee, K., Baik, S., & Ko, D.-H.
(2021). Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD. Coatings, 11(5), 568.
https://doi.org/10.3390/coatings11050568