Order Article Reprints

Jia Y, Sun S, Liu X, Lu Q, Qin K, Wang S, Guan Y, Chen H, Tang X, Zhang Y. Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors. Coatings. 2021; 11(12):1449. https://doi.org/10.3390/coatings11121449

Jia, Yifan, Shengjun Sun, Xiangtai Liu, Qin Lu, Ke Qin, Shaoqing Wang, Yunhe Guan, Haifeng Chen, Xiaoyan Tang, and Yuming Zhang. 2021. "Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors" Coatings 11, no. 12: 1449. https://doi.org/10.3390/coatings11121449

Jia, Y., Sun, S., Liu, X., Lu, Q., Qin, K., Wang, S., Guan, Y., Chen, H., Tang, X., & Zhang, Y. (2021). Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors. Coatings, 11(12), 1449. https://doi.org/10.3390/coatings11121449