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Journal: CoatingsVolume: 11Number: 1192
Article: Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors
- Authors:
- Dae-Hwan Kim1,
- Hwan-Seok Jeong1 and
- Dong-Ho Lee1
- et al.
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