Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Sample Name | Sample A | Sample B |
---|---|---|
RF power | 300 W | 350 W |
N2 flow rate | 1 sccm | 1.2 sccm |
Nitridation time | 60 min | 60 min |
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Chen, W.-C.; Chen, S.; Yu, T.-Y.; Su, J.; Chen, H.-P.; Lin, Y.-W.; Cheng, C.-P. Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding. Coatings 2021, 11, 2. https://doi.org/10.3390/coatings11010002
Chen W-C, Chen S, Yu T-Y, Su J, Chen H-P, Lin Y-W, Cheng C-P. Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding. Coatings. 2021; 11(1):2. https://doi.org/10.3390/coatings11010002
Chicago/Turabian StyleChen, Wei-Chun, Sheng Chen, Tung-Yuan Yu, James Su, Hung-Pin Chen, Yu-Wei Lin, and Chin-Pao Cheng. 2021. "Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding" Coatings 11, no. 1: 2. https://doi.org/10.3390/coatings11010002
APA StyleChen, W.-C., Chen, S., Yu, T.-Y., Su, J., Chen, H.-P., Lin, Y.-W., & Cheng, C.-P. (2021). Growth of Si3N4 Thin Films on Si(111) Surface by RF-N2 Plasma Nitriding. Coatings, 11(1), 2. https://doi.org/10.3390/coatings11010002