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Journal: Coatings, 2020
Volume: 10
Number: 570

Article: The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate
Authors: by H.Y. Wang, H.C. Chiu, W.C. Hsu, C.M. Liu, C.Y. Chuang, J.Z. Liu and Y.L. Huang
Link: https://www.mdpi.com/2079-6412/10/6/570

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