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Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

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State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, Guangzhou 510640, China
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Guangdong Province Key Lab of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China
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Authors to whom correspondence should be addressed.
Coatings 2020, 10(3), 282; https://doi.org/10.3390/coatings10030282
Received: 8 February 2020 / Revised: 14 March 2020 / Accepted: 17 March 2020 / Published: 18 March 2020
In this paper, zirconium–aluminum–oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 °C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 106 A/cm2@1MV/cm. Furthermore, the indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm2/Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 106 on/off ratio were achieved at an annealing temperature of 500 °C. View Full-Text
Keywords: solution method; zirconium–aluminum–oxide; mixed precursor; high dielectric constant; metal oxide thin-film transistor solution method; zirconium–aluminum–oxide; mixed precursor; high dielectric constant; metal oxide thin-film transistor
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Liang, Z.; Zhou, S.; Cai, W.; Fu, X.; Ning, H.; Chen, J.; Yuan, W.; Zhu, Z.; Yao, R.; Peng, J. Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor. Coatings 2020, 10, 282.

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